DocumentCode
440048
Title
A compatible bipolar and JFET process
Author
Wang, A.S.
Volume
22
fYear
1976
fDate
1976
Firstpage
45
Lastpage
47
Abstract
This paper describes the integration of a high frequency, low noise, vertical JFET with bipolar circuits without additional processing steps. The performance of the JFET is presented and an analysis of the short-channel effect of the JFET is discussed in detail.
Keywords
Bipolar transistors; Boron; Breakdown voltage; Circuit noise; Dielectric breakdown; Frequency; High speed optical techniques; JFET circuits; Laboratories; Lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Conference_Location
IEEE
Type
conf
Filename
1478693
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