Improved performance due to fast electronic escape in MQW p-i-n solar cells

This study relates device performance and carrier escape sequence in p-i(MQW)-n solar cells and experimental and theoretical investigations are undertaken. Carrier escape mechanisms and, in particular, the order at which holes and electrons escape from their respective well potentials are found to have a profound impact on device performance. In these InP/InAsP MQW solar cells, the light hole was found to be the first carrier to escape from the quantum wells. As a consequence, a faster electronic escape time as compared to heavy holes escape time is found to be important in these devices. MQW solar cells with high built-in electric field and fast electron escape time display better open circuit voltage and performance.