• DocumentCode
    440221
  • Title

    Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Thin Gate Oxides

  • Author

    Asenov, A. ; Saini, S.

  • Author_Institution
    The University of Glasgow, UK
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    188
  • Lastpage
    191
  • Keywords
    Atomic layer deposition; Doping; Epitaxial layers; Fluctuations; Lead compounds; MOSFETs; Quantization; Silicon; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440221