DocumentCode

440231

Title

Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm

Author

Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Universit¨at Bremen, Germany

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

236

Lastpage

239

Keywords

Cities and towns; Dielectric devices; Doping; Impurities; Kinetic theory; MOSFETs; Monte Carlo methods; Phonons; Scattering; Uniform resource locators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505483