• DocumentCode
    440245
  • Title

    Multiple SiGe Quantum Wells - Novel Channel Architecture for 0.12 um CMOS

  • Author

    Alieu, J. ; Skotnicki, T. ; Regolini, J.-L. ; Bremond, G.

  • Author_Institution
    France Telecom CNET, Meylan, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    292
  • Lastpage
    295
  • Keywords
    Buffer layers; CMOS process; Epitaxial growth; Epitaxial layers; Germanium silicon alloys; MOS devices; Silicon germanium; Stability; Telecommunications; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440245