• DocumentCode
    440247
  • Title

    Ge p-MOSFETs Compatible with Si CMOS-Technology

  • Author

    Reinking, D. ; Kammler, M. ; Hoffmann, N. ; von Hoegen, M. Horn ; Hofmann, K.R.

  • Author_Institution
    Universit¨at Hannover, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    300
  • Lastpage
    303
  • Keywords
    Buffer layers; CMOS technology; Electron mobility; Epitaxial growth; Germanium silicon alloys; Hall effect; MOSFET circuits; Silicon germanium; Substrates; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440247