440247

Ge p-MOSFETs Compatible with Si CMOS-Technology

Reinking, D. ; Kammler, M. ; Hoffmann, N. ; von Hoegen, M. Horn ; Hofmann, K.R.

Universit¨at Hannover, Germany

1

1999

13-15 Sept. 1999

300

303

Buffer layers; CMOS technology; Electron mobility; Epitaxial growth; Germanium silicon alloys; Hall effect; MOSFET circuits; Silicon germanium; Substrates; Transconductance;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505499