• DocumentCode
    440257
  • Title

    Effects of Carbon Doping on the 1/f noise in SiGe HBTs

  • Author

    Gruhle, A. ; Kibbel, H. ; König, U. ; Mähner, C. ; Mroczek, W.

  • Author_Institution
    DaimlerChrysler Research Center, Ulm, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    340
  • Lastpage
    343
  • Keywords
    Boron; Carbon dioxide; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Semiconductor device noise; Shape measurement; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440257