DocumentCode
440258
Title
Leakage Current Mechanisms Associated with Selective Epitaxy in SiGe Heterojunction Bipolar Transistors
Author
Schiz, J. ; Bonar, J.M. ; Cristiano, Fuccio ; Ashburn, Peter ; Hemment, P.L.F. ; Hall, Sebastian
Author_Institution
University of Southampton, UK
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
344
Lastpage
347
Keywords
Art; Capacitance-voltage characteristics; Doping; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; MOSFETs; Semiconductor films; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505510
Link To Document