Investigation of the Threshold Voltage Difference between Partially-Depleted SOI and bulk CMOS transistors

Author

Meer, Hans Van ; Lyu, Jeong-Ho ; Kubicek, S. ; Meyer, Kristin De

Author_Institution

IMEC, Leuven, Belgium

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

372

Lastpage

375

Keywords

Boron; CMOS process; CMOS technology; Doping; Fabrication; Indium; MOS devices; MOSFETs; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505517

Link To Document