DocumentCode

440265

Title

Suitability of Elevated Source/Drain for Deep Submicron CMOS

Author

Gwoziecki, R. ; Jurczak, M. ; Skotnicki, T. ; Regolini, J.L. ; Paoli, M.

Author_Institution

France Telecom CNET, Meylan, France

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

384

Lastpage

387

Keywords

CMOS technology; Doping; Electric resistance; Fabrication; MOS devices; MOSFET circuits; Silicidation; Space technology; Telecommunications; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505520