Title :
Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs
Author :
Hansch, W. ; Anil, K. ; Bieringer, P. ; Fink, C. ; Kaesen, F. ; Eisele, I. ; Tanaka, M. ; Miura-Mattausch, M.
Author_Institution :
Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany
Keywords :
Doping profiles; Epitaxial layers; Fabrication; Fluctuations; MOSFETs; Medical simulation; Molecular beam epitaxial growth; Physics; Reproducibility of results; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
