DocumentCode
440269
Title
Channel Engineering for the Reduction of Random-Dopant Placement-Induced Threshold Voltage Fluctuations in Vertical sub-100nm MOSFETs
Author
Hansch, W. ; Anil, K. ; Bieringer, P. ; Fink, C. ; Kaesen, F. ; Eisele, I. ; Tanaka, M. ; Miura-Mattausch, M.
Author_Institution
Universit¨at der Bundeswehr M¨unchen, Neubiberg, Germany
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
408
Lastpage
411
Keywords
Doping profiles; Epitaxial layers; Fabrication; Fluctuations; MOSFETs; Medical simulation; Molecular beam epitaxial growth; Physics; Reproducibility of results; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505526
Link To Document