DocumentCode

440272

Title

Silicon Nitridation by Nitric Oxide (NO) for Ta2O5 Gate Dielectric Application in MOS Devices

Author

Devoivre, T. ; Martin, F. ; Papadas, C. ; Setton, M.

Author_Institution

STMicroelectronics, Meylan, France

Volume

1

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

420

Lastpage

423

Keywords

CMOS process; Dielectric constant; Dielectric devices; MOS devices; MOSFETs; Optical films; Oxidation; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

conf

Filename

1505529