Narrow Decaborane (B10H14) Implanted Base For High-Speed Si Bipolar Transistors

Author

Deixler, P. ; Muda, G.C. ; Terpstra, D. ; Klootwijk, J.H. ; van Berkum, J.G.M. ; Havens, R.J.

Author_Institution

Philips Research Laboratories, Eindhoven, The Netherlands

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

440

Lastpage

443

Keywords

Bipolar transistors; Boron; Cutoff frequency; Doping; Fabrication; Furnaces; Implants; Laboratories; Production; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505534

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