DocumentCode :
440281
Title :
1/f Noise Simulation in a-Si TFTs over Linear, Saturation and Subthreshold Regions. Comparison to BSIM Model
Author :
Rhayem, J. ; Rigaud, D. ; Valenza, M. ; Szydlo, N. ; Lebrun, H.
Author_Institution :
Universite Montpellier II, France
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
472
Lastpage :
475
Keywords :
Active noise reduction; Amorphous silicon; Conductive films; Crystallization; Data mining; Equations; Fluctuations; MOSFET circuits; Marine vehicles; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505542
Link To Document :
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