DocumentCode
440286
Title
A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models
Author
Bartels, Marcus ; Decker, Stefan ; Neinhus, B. ; Meinerzhagen, B.
Author_Institution
Universit¨at Bremen, Germany
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
492
Lastpage
495
Abstract
The authors propose a robust curve tracing scheme for the simulation of the complete Ic(Vce)|Is=0 breakdown characteristic of a bipolar transistor including snapback effects. Compared to classical curve tracing schemes, this new algorithm does not require the complete Jacobian matrix and/or external resistors of arbitrary size at the device contacts. Therefore it allows the application of nonlocal impact ionization models for the evaluation of bipolar breakdown characteristics.
Keywords
Electric breakdown; Impact ionization; MOS devices; Parameter extraction; Principal component analysis; Robustness; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505547
Link To Document