DocumentCode
440287
Title
Simulation of 0.15 Micron CMOS Device Performance
Author
Jones, S.K. ; Badenes, G.
Author_Institution
Marconi Materials Technology, Northants, United Kingdom
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
496
Lastpage
499
Keywords
Acceleration; Capacitance; Doping; MOS devices; MOSFET circuits; Materials science and technology; Performance analysis; Predictive models; Process design; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505548
Link To Document