• DocumentCode
    440298
  • Title

    Noise modeling of InP- based base and collector self-aligned double heterojunction bipolar transistors

  • Author

    Danelon, V. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Vernet, G. ; Blayac, S. ; Riet, M.

  • Author_Institution
    Universite Paris-Sud, Orsay, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    556
  • Lastpage
    559
  • Keywords
    Double heterojunction bipolar transistors; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Low-frequency noise; Noise level; Noise measurement; Phase noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440298