Title :
Performance and Reliability of 70nm NMOSFETs with Indium Retrograde Doping Channels
Author :
Xiang, Qi ; Martin, Derek ; Yu, Bin ; Yeap, Geoffrey C F ; Lin, Ming-Ren
Author_Institution :
Advanced Micro Devices, Inc., Sunnyvale, CA, USA
Keywords :
Boron; Degradation; Dielectrics; Doping; Fabrication; Implants; Indium; Leakage current; MOSFETs; Testing;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
