مرکز منطقه ای اطلاع رساني علوم و فناوري - RF modelling for 0.1um gate length MOSFETs

DocumentCode :

440310

Title :

RF modelling for 0.1um gate length MOSFETs

Author :

Morifuji, E. ; Ohguro, T. ; Kimijima, H. ; Yoshitomi, T. ; Momose, H.S. ; Katsumata, Y. ; Ishimaru, K. ; Matsuoka, F. ; Kinugawa, M. ; Iwai, H.

Author_Institution :

Toshiba Corporation, Yokohama, Japan

Volume :

fYear :

1999

fDate :

13-15 Sept. 1999

Firstpage :

656

Lastpage :

659

Keywords :

Capacitance; Circuit simulation; Equations; Equivalent circuits; MOSFETs; Noise figure; Radio frequency; Roentgenium; Scattering parameters; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location :

Leuven, Belgium

Print_ISBN :

2-86332-245-1

Type :

conf

Filename :

1505588

Link To Document :