RF modelling for 0.1um gate length MOSFETs

Author

Morifuji, E. ; Ohguro, T. ; Kimijima, H. ; Yoshitomi, T. ; Momose, H.S. ; Katsumata, Y. ; Ishimaru, K. ; Matsuoka, F. ; Kinugawa, M. ; Iwai, H.

Author_Institution

Toshiba Corporation, Yokohama, Japan

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

656

Lastpage

659

Keywords

Capacitance; Circuit simulation; Equations; Equivalent circuits; MOSFETs; Noise figure; Radio frequency; Roentgenium; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505588

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