• DocumentCode
    440314
  • Title

    Simulation study of the impact of channel doping profiles on MOSFET analog performances

  • Author

    Fiegna, Claudio ; Abramo, Antonio ; Sangiorgi, Enrico

  • Author_Institution
    Universita di Ferrara, Italy
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    688
  • Lastpage
    691
  • Keywords
    Analog circuits; Bipolar transistors; Capacitance; Cutoff frequency; Doping profiles; Epitaxial growth; Guidelines; MOSFET circuits; Radio frequency; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440314