440319

Base current kink effect in SiGe HBT´s

Peter, M.S. ; Slotboom, J.W. ; Terpstra, D. ; Klootwijk, J.H. ; van Rijs, F. ; de Boer, W.B.

Philips Research Laboratories, Eindhoven, Netherlands

1

1999

13-15 Sept. 1999

716

719

Bipolar transistors; Current measurement; Electrical resistance measurement; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Silicon germanium; Spontaneous emission; Voltage;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505603