• DocumentCode
    440319
  • Title

    Base current kink effect in SiGe HBT´s

  • Author

    Peter, M.S. ; Slotboom, J.W. ; Terpstra, D. ; Klootwijk, J.H. ; van Rijs, F. ; de Boer, W.B.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    716
  • Lastpage
    719
  • Keywords
    Bipolar transistors; Current measurement; Electrical resistance measurement; Electrons; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Silicon germanium; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440319