• DocumentCode
    440321
  • Title

    SiGe HBT Performance Improvements from Lateral Scaling

  • Author

    Freeman, G. ; Greenberg, D.R. ; Walter, K. ; Subbanna, S.

  • Author_Institution
    IBM Microelectronics, Hopewell Junction, NY, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    724
  • Lastpage
    727
  • Keywords
    BiCMOS integrated circuits; CMOS technology; Electric resistance; Electric variables measurement; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Semiconductor process modeling; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440321