• DocumentCode
    440323
  • Title

    High Tunnelling Current Density in Silicon/Silicon-Germanium Junctions

  • Author

    Reitemann, G. ; Kasper, E. ; Duschel, R. ; Schmidt, O.G. ; Eberl, K.

  • Author_Institution
    Universit¨at Stuttgart, Germany
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    732
  • Lastpage
    735
  • Keywords
    Annealing; Current density; Doping; Germanium silicon alloys; Molecular beam epitaxial growth; Semiconductor diodes; Silicon germanium; Substrates; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440323