DocumentCode
440405
Title
Boltzmann´s kinetic equation solution for polycrystalline semiconductor
Author
Lubimsky, V.M. ; Moiseev, A.G.
Author_Institution
NSTU, Novosibirsk, Russia
fYear
2005
fDate
26 June-2 July 2005
Firstpage
219
Lastpage
221
Abstract
The calculation of potential barriers at grain boundaries in polycrystalline semiconductors appearing under electric field is considered. On the basis of solution for Boltzmann´s kinetic equation the expression for the relaxation time for carriers scattering on disordered system of the barriers is derived. The approach for calculation of current-voltage characteristic in nonlinear approximation for polycrystalline semiconductor is developed.
Keywords
Boltzmann equation; carrier relaxation time; elemental semiconductors; grain boundaries; kinetic theory; semiconductor thin films; Boltzmann kinetic equation solution; carrier relaxation time; carrier scattering; current-voltage characteristic; disordered system; electric field; grain boundaries; nonlinear approximation; polycrystalline semiconductor; polycrystalline silicon; potential barrier; Crystallization; Current-voltage characteristics; Differential equations; Grain boundaries; Kinetic theory; Nonlinear equations; Scattering; Shape; Space charge; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN
0-7803-8943-3
Type
conf
DOI
10.1109/KORUS.2005.1507691
Filename
1507691
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