A 2.4-GHz latch-structured power amplifier for Bluetooth

Author

Choi, Young-Shig ; Choi, Hyuk-Hwan ; Kwon, Tae-Ha

Author_Institution

Div. of Electron., Comput. & Telecommun. Eng., Pukyong Nat. Univ., Busan, South Korea

fYear

2005

fDate

26 June-2 July 2005

Firstpage

834

Lastpage

837

Abstract

A two-stage class E power amplifier operating at 2.4GHz was designed in a 0.25-μm CMOS process for class-1 Bluetooth applications. The power amplifier employs a class-E topology in order to obtain high efficiency by exploiting its soft-switching property. The latch-structured design of the preamplifier with auxiliary amplifiers enables its output signal to be as sharp as possible for the soft switching of the next stage power amplifier. This improves the overall efficiency of the proposed power amplifier which has a PAE of 65.8%,a power gain of 20dB and an output power of 20dBm.

Keywords

Bluetooth; CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; 0.25 micron; 2.4 GHz; 20 dB; 65.8 percent; CMOS process; auxiliary amplifier; class-1 Bluetooth application; class-E topology; latch-structured design; latch-structured power amplifier; soft-switching property; two-stage class E power amplifier; Bluetooth; CMOS process; CMOS technology; Costs; High power amplifiers; Operational amplifiers; Power amplifiers; Preamplifiers; Signal design; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on

Print_ISBN

0-7803-8943-3

Type

conf

DOI

10.1109/KORUS.2005.1507916

Filename

1507916