Title :
Comparative study of MOST resistive configurations
Author :
Alegre, J.P. ; Celma, S. ; Sanz, M.T. ; Calvo, B.
fDate :
28 Aug.-2 Sept. 2005
Abstract :
The purpose of this work is to carry out a comparative study between three linear MOS resistor configurations: the balanced Banu-Tsividis structure, the MOS resistive circuit, and the MOS current divider. Three MOS models have been used in Matlab simulation environment: the BSIM4, the approximate strong inversion model, and the charge-sheet model. Finally, experimental measurements have been carried out in order to draw conclusions on the relative linearity of the MOS resistive configurations under study and verify the accuracy of the available models.
Keywords :
MOSFET; semiconductor device models; BSIM4; MOS current divider; MOS models; MOS resistive circuit; MOST resistive configurations; Matlab simulation; balanced Banu-Tsividis structure; charge-sheet model; linear MOS resistor configurations; strong inversion model; Circuits; Filters; Harmonic analysis; Harmonic distortion; Linearity; MOSFETs; Mathematical model; Resistors; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN :
0-7803-9066-0
DOI :
10.1109/ECCTD.2005.1522924
