DocumentCode
44096
Title
Low-Capacitance SCR Structure for RF I/O Application
Author
Shurong Dong ; Meng Miao ; Jian Wu ; Jie Zeng ; Zhiwei Liu ; Liou, Juin J.
Author_Institution
Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Volume
55
Issue
2
fYear
2013
fDate
Apr-13
Firstpage
241
Lastpage
247
Abstract
Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.
Keywords
capacitance; electrostatic discharge; protection; radiofrequency integrated circuits; semiconductor diodes; thyristors; ESD device; RF I/O application; RF I/O protection; SCR structure; Si; diodes; electrostatic discharge; layout design; metal interconnection; parasitic capacitance; silicon controlled rectifier; Capacitance; Electrostatic discharges; Junctions; Layout; Metals; Radio frequency; Thyristors; Electrostatic discharge (ESD); parasitic capacitance; radio frequency (RF);
fLanguage
English
Journal_Title
Electromagnetic Compatibility, IEEE Transactions on
Publisher
ieee
ISSN
0018-9375
Type
jour
DOI
10.1109/TEMC.2012.2216271
Filename
6305470
Link To Document