DocumentCode :
44238
Title :
Author :
Su Jin Kim ; Sang Young Park ; Kyeong Heon Kim ; Suk Won Kim ; Tae Geun Kim
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume :
35
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
232
Lastpage :
234
Abstract :
Herein, a Ga2O3-based indium tin oxide (Ga2O3:ITO) thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3:ITO thin film were 49 Ω/sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω/sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.
Keywords :
electric properties; electrodes; gallium compounds; indium compounds; light emitting diodes; light transmission; optical properties; Ga2O3:ITO; current 20 mA; electrical properties; near ultraviolet light emitting diodes; optical properties; optical transmittance; transparent conducting electrode; wavelength 405 nm; Electrodes; Indium tin oxide; Light emitting diodes; Photonic band gap; Radio frequency; Resistance; Substrates; ${rm Ga}_{2}{rm O}_{3}{:}{rm ITO}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2292080
Filename :
6698329
Link To Document :
