MIM capacitors model determination and analysis of parameter influence

Author

Lombard, Ph ; Arnould, J.-D. ; Exshaw, O. ; Eusebe, H. ; Benech, Ph ; Farcy, A. ; Torres, J.

Author_Institution

IMEP, CNRS, Grenoble, France

Volume

3

fYear

2005

fDate

20-23 June 2005

Firstpage

1129

Abstract

Metal insulator metal (MIM) capacitors are frequently used in radio frequency integrated circuits. Several Cu-Si/sub 3/N/sub 4/-Cu capacitors were realized in a 0.12 /spl mu/m CMOS technology using damascene architecture, which is compatible with high-K dielectrics. Different others structures were also integrated for calibration and de-embedding. The measurements were carried out from 45 MHz to 40 GHz. The capacitors measurements were de-embedded before modelling the capacitor. Then, the model parameters were analysed in a filter circuit structure to verify the validity of the obtained values and consequently the validity of the proposed method.

Keywords

CMOS integrated circuits; MIM devices; capacitance measurement; radiofrequency integrated circuits; thin film capacitors; 0.12 mum; 45 MHz to 60 GHz; CMOS technology; capacitors measurements; damascene architecture; filter circuit structure; high-K dielectrics; metal insulator metal capacitors; radio frequency integrated circuits; CMOS technology; Dielectric measurements; Dielectrics and electrical insulation; High-K gate dielectrics; Integrated circuit measurements; Integrated circuit technology; MIM capacitors; Metal-insulator structures; Radiofrequency integrated circuits; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on

Conference_Location

Dubrovnik, Croatia

Print_ISBN

0-7803-8738-4

Type

conf

DOI

10.1109/ISIE.2005.1529082

Filename

1529082