SiGe transformer matched power amplifier for operation at millimeter-wave frequencies

Author

Pfeiffer, Ullrich R. ; Goren, David ; Floyd, Brian A. ; Reynolds, Scott K.

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

141

Lastpage

144

Abstract

In this paper, a transformer matched power amplifier for operation at millimeter-wave frequencies is presented. The SiGe single-stage push-pull amplifier uses a stacked transformer above a ground shield for output matching. The millimeter-wave transformer has a high coupling factor k = 0.8 and provides a very compact circuit layout. At 61.5 GHz the class-AB biased amplifier achieves a power gain of 12 dB with 8.5 dBm output power at a 1 dB compression. The saturated output power was measured up to P_sat = 14 dBm with a maximum PAE of 4.2%.

Keywords

Ge-Si alloys; circuit layout; differential amplifiers; impedance matching; millimetre wave devices; millimetre wave power amplifiers; semiconductor materials; transformers; 12 dB; 61.5 GHz; SiGe; class-AB biased amplifier; millimeter-wave operation; millimeter-wave transformer; output matching; single-stage push-pull amplifier; stacked transformer; transformer matched power amplifier; very compact circuit layout; Circuit faults; Frequency; Germanium silicon alloys; Impedance matching; Millimeter wave circuits; Millimeter wave measurements; Operational amplifiers; Power amplifiers; Power generation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European

Print_ISBN

0-7803-9205-1

Type

conf

DOI

10.1109/ESSCIR.2005.1541579

Filename

1541579