DocumentCode
443199
Title
Dynamic state-retention flip flop for fine-grained sleep-transistor scheme
Author
Henzler, Stephan ; Nirschi, T. ; Pacha, Christian ; Spindler, Peter ; Teichmann, Philip ; Fulde, Michael ; Fischer, Juergen ; Eireiner, Matthias ; Fischer, Thomas ; Georgakos, Georg ; Berthold, Joerg ; Schmitt-Landsiedel, Doris
Author_Institution
Munich Tech. Univ., Germany
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
145
Lastpage
148
Abstract
Fine-grained sleep transistor scheme is the rigorous application of power gating to reduce standby power consumption in idle circuit blocks. Small circuit blocks are suspended for a short time while they are temporarily not needed. A sense amplifier based state retention flip-flop preserving the logical state of the circuit during this short idle times is proposed, that requires neither additional control signals nor an additional power supply for its state retention functionality and can be integrated into a standard design flow without any modifications. The trade-off between propagation delay and retention time is derived analytically. Retention times in the range of milliseconds can be achieved with D-to-Q delays of 100ps to 200ps.
Keywords
amplifiers; flip-flops; 100 to 200 ps; D-to-Q delays; dynamic state retention flip flop; fine-grained sleep-transistor; idle circuit blocks; power gating; propagation delay; retention time; sense amplifier; standby power consumption; Communications technology; Energy consumption; Latches; Leakage current; Logic circuits; Power amplifiers; Power supplies; Propagation delay; Threshold voltage; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541580
Filename
1541580
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