DocumentCode
443205
Title
A 5-GHz BiCMOS variable-gain low noise amplifier with inductorless low-gain branch
Author
Liu, Mingxu ; Craninckx, Jan
Author_Institution
IMEC, Leuven, Belgium
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
223
Lastpage
226
Abstract
A 5-GHz variable-gain low noise amplifier without using an excess inductor in its low-gain mode has been demonstrated. When the LNA´s gain is reduced from 16.3 dB to 5.8 dB, its IIP3 is improved from -7.8 dBm to +1.1 dBm and current consumption is reduced from 3 mA to 2 mA. The noise figures in the high- and low-gain modes are 3.5 dB and 8.3 dB, respectively. Input and output impedance matching are well maintained in both modes. The amplifier is also unconditionally stable from 100 MHz to 10 GHz.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; circuit stability; impedance matching; low noise amplifiers; microwave amplifiers; microwave integrated circuits; semiconductor materials; 0.1 to 10 GHz; 2 mA; 3.5 dB; 5 GHz; 5.8 dB; 8.3 dB; BiCMOS low noise amplifier; SiGe; high-gain mode; impedance matching; low-gain mode; variable-gain low noise amplifier; BiCMOS integrated circuits; Energy consumption; Impedance matching; Interference; Linearity; Low-noise amplifiers; Noise figure; Noise measurement; Signal to noise ratio; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541600
Filename
1541600
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