DocumentCode :
443253
Title :
Variation of flash memory threshold voltage correlated with applied voltage slope in Fowler Nordheim erase mode
Author :
Bouquet, Valery ; Canet, Pierre ; Lalande, Frédéric ; Devin, Jean ; Leconte, Bruno ; Mariéma, Nicolas
Author_Institution :
IMT Technopole de Chateau Gombert, L2MP-UMR CNRS, Marseille, France
Volume :
1
fYear :
2005
fDate :
25-28 July 2005
Firstpage :
86
Abstract :
In order to pre-evaluate the necessary time needed to write a flash cell memory, we use a simplified expression for the Fowler Nordheim injecting current during the erase mode, which allows us to find a relationship between the applied voltages and the resulting threshold voltage. We show in this study that the absolute value of the derivative of the threshold voltage is equal to the positive signal slope applied on the control gate. We validate this assumption by measurements on samples provided by STmicroelectronics.
Keywords :
flash memories; Fowler Nordheim injecting current; STmicroelectronics; erase mode; flash memory; threshold voltage; Capacitance; Channel hot electron injection; Character generation; Equations; Flash memory; Nonvolatile memory; Radiofrequency interference; Silicon; Threshold voltage; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research in Microelectronics and Electronics, 2005 PhD
Print_ISBN :
0-7803-9345-7
Type :
conf
DOI :
10.1109/RME.2005.1543009
Filename :
1543009
Link To Document :
بازگشت