Title :
Investigation on the compositionally graded HfxAlyOz films for TiN based DRAM capacitor
Author :
Kil, Deok-Sin ; Hong, Kwon ; Yeom, Seung-Jin ; Song, Han-Sang ; Park, Ki-Seon ; Roh, Jae-Sung ; Kwak, Noh-Jung ; Sohn, Hyun-Cheol ; Kim, Jin-Woong ; Park, Sung-Wook
Author_Institution :
R & D Div., Hynix Semicond. Inc., Kyoungki-Do, South Korea
Abstract :
New concept of capacitor dielectric thin film was successfully demonstrated through graded HfxAlyOz dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded HfxAlyOz dielectric films showed drastically reduced leakage current and highly improved breakdown voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3Å and leakage current could be maintained as low as 1E-16A/cell at +1.0V.
Keywords :
DRAM chips; MIM devices; aluminium compounds; dielectric thin films; hafnium compounds; leakage currents; thin film capacitors; 0.45 to 0.75 V; DRAM; HfAlO; MIM capacitor; TiN; breakdown voltage; capacitor dielectric thin film; leakage current; post ozone annealing; Dielectric thin films; Electrodes; Hafnium oxide; Leakage current; MIM capacitors; Random access memory; Semiconductor films; Sputtering; Temperature; Tin;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546662
