Title :
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments
Author :
Reggiani, S. ; Gnani, E. ; Rudan, M. ; Baccarani, G. ; Bychikhin, S. ; Kuzmik, J. ; Pogany, D. ; Gornik, E. ; Denison, M. ; Jensen, N. ; Groos, G. ; Stecher, M.
Author_Institution :
ARCES & DEIS, Bologna Univ., Italy
Abstract :
Different protection diodes are investigated with electrothermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K.
Keywords :
electrostatic discharge; failure analysis; p-n junctions; semiconductor device models; semiconductor diodes; thermal analysis; ESD protection structures; electrothermal simulation; optical phase shifts; p-n junction; predictive device simulation; protection diodes; thermal distribution; thermal failure; transient interferometric thermal-mapping; Diodes; Electrostatic discharge; Electrostatic interference; Electrothermal effects; Optical interferometry; P-n junctions; Phase shifting interferometry; Predictive models; Protection; Temperature distribution;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546672
