Author :
Kumura, Y. ; Ozaki, T. ; Kanaya, H. ; Hidaka, O. ; Shimojo, Y. ; Shuto, S. ; Yamada, Y. ; Tomioka, K. ; Yamakawa, K. ; Yamazaki, S. ; Takashima, D. ; Miyakawa, T. ; Shiratake, S. ; Ohtsuki, S. ; Kunishima, I. ; Nitayama, A.
Abstract :
An extremely damage-robust SrRuO3/IrO2 top electrode FeRAM with Cu BEOL process is demonstrated for the first time as a promising device for 130nm CMOS embedded memory. The ferroelectric capacitor with SrRuO3/IrO2 top electrode has no degradation during Cu metallization to suppress the oxygen and lead vacancies at the top electrode interface. Switching charge (Qsw) of 40uC/cm2 is achieved for 0.45×0.45μm2 top electrode (TE) size capacitor. The opposite state polarization margin of 90% is retained against imprint at 70hrs, 150C bake. This high reliable capacitor with large Qsw and a small bit line capacitance of ´chain´ structure (Ozaki, 2001) increase signal window drastically. A signal window of 730mV at 1.8V operation voltage after 3-level Cu metallization is achieved. This technology realizes future 130nm embedded FeRAM and beyond.
Keywords :
CMOS memory circuits; copper; ferroelectric capacitors; ferroelectric storage; iridium compounds; metallisation; random-access storage; ruthenium compounds; strontium compounds; 1.8 V; 130 nm; 150 C; 70 hrs; 730 mV; BEOL process; CMOS; Cu; FeRAM; SrRuO3-IrO2; electrode interface; embedded memory; ferroelectric capacitor; metallization; CMOS process; Capacitors; Degradation; Electrodes; Ferroelectric films; Ferroelectric materials; Metallization; Nonvolatile memory; Random access memory; Tellurium;
