• DocumentCode
    444033
  • Title

    Spin-coherence-induced hole burning in charged GaAs quantum dots

  • Author

    Cheng, Jun ; Xu, Xiaodong ; Dutt, M. V Gurudev ; Wu, Yanwen ; Steel, D.G. ; Bracker, A.S. ; Gammon, D. ; Sham, L.J.

  • Author_Institution
    H. M. Randall Lab., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    33
  • Abstract
    Spin-coherence-induced hole burning is clearly identified in high-resolution nearly degenerate differential transmission experiment. The inhomogeneously broadened spin decoher-ence time is extracted from the narrow hole-burning widths, and approaches 11 nsec at zero field.
  • Keywords
    III-V semiconductors; gallium arsenide; interface states; light coherence; optical hole burning; semiconductor quantum dots; 11 ns; GaAs; charged GaAs quantum dots; degenerate differential transmission; inhomogeneously broadened spin decoherence time; narrow hole-burning width; spin-coherence-induced hole burning; zero field; Electron optics; Gallium arsenide; Laser excitation; Magnetic fields; Magnetic resonance; Nonlinear optics; Optical pumping; Optical scattering; Quantum dots; Trions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2005. QELS '05
  • Print_ISBN
    1-55752-796-2
  • Type

    conf

  • DOI
    10.1109/QELS.2005.1548665
  • Filename
    1548665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=444033