DocumentCode
444173
Title
Ultrafast carrier dynamics in amorphous semiconductors determined by time-resolved THz and NIR spectroscopy
Author
Nampoothiri, A. V Vasudevan ; Dexheimer, S.L.
Author_Institution
Dept. of Phys., Washington State Univ., Pullman, WA, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
452
Abstract
We determine ultrafast carrier dynamics characteristic of disordered semiconductors, including both dispersive transport and bimolecular recombination, via self-consistent modeling of time-resolved measurements in both the far-infrared (THz) and near-infrared spectral regions.
Keywords
amorphous semiconductors; carrier mobility; infrared spectroscopy; submillimetre wave spectroscopy; time resolved spectroscopy; NIR spectroscopy; amorphous semiconductors; bimolecular recombination; disordered semiconductors; dispersive transport; far-infrared spectral region; near-infrared spectral region; self-consistent modeling; time-resolved THz spectroscopy; time-resolved measurement; ultrafast carrier dynamics characteristic; Amorphous semiconductors; Dispersion; Electron traps; Optical pumping; Optical sensors; Radiative recombination; Semiconductor materials; Spectroscopy; Time measurement; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548813
Filename
1548813
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