DocumentCode
444203
Title
Excitation induced polarization decay in semiconductor quantum dots
Author
Schneider, H.C. ; Chow, W.W. ; Koch, S.W.
Author_Institution
Dept. of Phys., Kaiserslautern Univ., Germany
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
540
Abstract
Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.
Keywords
Markov processes; excitons; light polarisation; localised states; semiconductor quantum dots; spectral line broadening; spectral line shift; Coulomb interaction; delocalized carriers; excitation induced polarization decay; excitation induced polarization dephasing; frequency dependent broadening; localized carriers; microscopic approach; nonMarkovian effects; nonlinear resonance shifts; semiconductor quantum dots; Charge carrier density; Laser excitation; Nonlinear optics; Optical scattering; Optical sensors; Particle scattering; Polarization; Quantum computing; Quantum dot lasers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548845
Filename
1548845
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