DocumentCode
444255
Title
THz spectroscopy of excitons in bulk GaAs and in AlGaAs/GaAs quantum wells
Author
Mitrofanov, Oleg ; Rapaport, Ronen ; Pfeiffer, Loren N. ; West, Ken W.
Author_Institution
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
696
Abstract
Distinctive excitonic spectral signature in Terahertz region provides an excellent method to probe the exciton population in semiconductors. We present the study of exciton formation and dynamics in GaAs bulk and quantum well systems.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; submillimetre wave spectra; time resolved spectra; AlGaAs-GaAs; AlGaAs-GaAs quantum wells; GaAs; THz spectroscopy; bulk GaAs; exciton dynamics; exciton formation; excitonic spectral signature; Absorption; Charge carrier processes; Excitons; Frequency; Gallium arsenide; Optical imaging; Optical pumping; Plasma temperature; Resonance; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548906
Filename
1548906
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