• DocumentCode
    44435
  • Title

    Influence of Post-Annealing on Resistivity of VOx Thin Film

  • Author

    Rong-Hong Chen ; Yu-Long Jiang ; Bing-Zong Li

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • Volume
    35
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    780
  • Lastpage
    782
  • Abstract
    The influence of post-annealing (PA) on the resistivity of 55-nm VOx film (~1.2 Ω · cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coefficient of resistance (TCR) by enhancing the formation of embedded VO2 nanocrystals (NCs), while keeping the VOx film composition unchanged. A model based on charge hopping between VO2 NCs is proposed to illustrate the relationship between the temperature-dependent resistivity and the constant TCR.
  • Keywords
    amorphous semiconductors; annealing; electrical resistivity; hopping conduction; nanostructured materials; semiconductor thin films; vanadium compounds; TCR; VO2-VOx; charge hopping; nanocrystals; post-annealing; size 55 nm; temperature coefficient of resistance; temperature-dependent resistivity; thin film resistivity; Annealing; Conductivity; Resistance; Silicon; Substrates; Temperature measurement; X-ray scattering; Vanadium oxide; nanocrystal; post-annealing; post-annealing.; temperature coefficient of resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2326691
  • Filename
    6828703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=44435