DocumentCode
444362
Title
Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 μm
Author
Cade, N.I. ; Gotoh, H. ; Kamada, H. ; Tawara, T. ; Sogawa, T. ; Nakano, H. ; Okamoto, H.
Author_Institution
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1067
Abstract
Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe the formation of neutral and charged exciton complexes and a large s-p shell splitting.
Keywords
III-V semiconductors; bismuth; excitons; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; 1300 nm; Bi:InGaAs; InAs-InGaAs; charged exciton complex; neutral exciton complex; photoluminescence spectra; quantum dots; quantum well; s-p shell splitting; Excitons; Gallium arsenide; Indium gallium arsenide; Laboratories; Luminescence; Photoluminescence; Quantum dots; Spectroscopy; Stimulated emission; Structural shells;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549032
Filename
1549032
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