DocumentCode
445314
Title
Data retention behavior in the embedded SONOS nonvolatile memory cell
Author
Chae, H.S. ; Jung, Y.S. ; Seo, S. ; Han, J.H. ; Hyun, J.W. ; Park, G.W. ; Um, M.Y. ; Kim, J.H. ; Lee, B.J. ; Kim, K.C. ; Cho, I.W. ; Bae, G.J. ; Lee, N.I. ; Kang, S.T. ; Kim, C.-W.
Author_Institution
Devices Lab, Samsung Adv. Inst. of Technol., Kyungki-do
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
35
Lastpage
36
Abstract
In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope
Keywords
leakage currents; random-access storage; semiconductor junctions; data retention behavior; embedded SONOS; leakage current; nonvolatile memory cell; source junction; write/erase cycles; Charge carrier processes; Current measurement; Dielectrics; Electronic mail; Electrons; Large scale integration; Leakage current; Nonvolatile memory; SONOS devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553043
Filename
1553043
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