DocumentCode
445316
Title
The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND type charge trap flash memory devices
Author
Jeon, Sanghun ; Han, Jeong Hee ; Junghoon Lee ; Hyun, Jaewoong ; Ju Hyung Kim ; Jeong, Y.S. ; Chae, Hee Soon ; Chae, Soo Doo ; Kim, Ju Hyung ; Lee, Junghoon ; Choi, Sangmoo ; Jang, Man ; Hwang, Hyunsang ; Chungwoo Kim
Volume
1
fYear
2005
fDate
20-22 June 2005
Firstpage
39
Lastpage
40
Keywords
Dielectric devices; Electron traps; Flash memory; Heterojunction bipolar transistors; High K dielectric materials; High-K gate dielectrics; Materials science and technology; Silicon compounds; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553045
Filename
1553045
Link To Document