Tunnel oxide thickness dependence of activation energy for SiGe quantum dot flash memory

Author

Liu, Yueran ; Tang, Shan ; Yu, Decai ; Hwang, Gyeong ; Banerjee, Sanjay

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

41

Lastpage

42

Abstract

For nonvolatile memory devices, a long retention time is very important. Nanocrystal floating gate has been demonstrated to lead to an improvement for retention time compare to conventional continuous floating gate. In this paper, the authors present our studies of activation energy for SiGe nanocrystal flash memory devices as a function of tunnel oxide thickness to try to clarify this issue

Keywords

Ge-Si alloys; MOSFET; capacitors; flash memories; random-access storage; semiconductor quantum dots; SiGe; activation energy; nanocrystal flash memory devices; nanocrystal floating gate; nonvolatile memory devices; semiconductor quantum dot; tunnel oxide thickness dependence; Density functional theory; Electron traps; Flash memory; Germanium silicon alloys; Nanocrystals; Nonvolatile memory; Quantum dots; Silicon germanium; Temperature dependence; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553046

Filename

1553046