Title :
Tunnel oxide thickness dependence of activation energy for SiGe quantum dot flash memory
Author :
Liu, Yueran ; Tang, Shan ; Yu, Decai ; Hwang, Gyeong ; Banerjee, Sanjay
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
For nonvolatile memory devices, a long retention time is very important. Nanocrystal floating gate has been demonstrated to lead to an improvement for retention time compare to conventional continuous floating gate. In this paper, the authors present our studies of activation energy for SiGe nanocrystal flash memory devices as a function of tunnel oxide thickness to try to clarify this issue
Keywords :
Ge-Si alloys; MOSFET; capacitors; flash memories; random-access storage; semiconductor quantum dots; SiGe; activation energy; nanocrystal flash memory devices; nanocrystal floating gate; nonvolatile memory devices; semiconductor quantum dot; tunnel oxide thickness dependence; Density functional theory; Electron traps; Flash memory; Germanium silicon alloys; Nanocrystals; Nonvolatile memory; Quantum dots; Silicon germanium; Temperature dependence; US Department of Transportation;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553046
