DocumentCode :
445324
Title :
Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz
Author :
Kumar, V. ; Chen, G. ; Guo, S. ; Peres, B. ; Adesida, I.
Volume :
1
fYear :
2005
fDate :
June 20-22, 2005
Firstpage :
61
Lastpage :
62
Keywords :
Aluminum gallium nitride; Electrical resistance measurement; Gain; Gallium nitride; HEMTs; MODFETs; Microwave devices; Plasma measurements; Power generation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553055
Filename :
1553055
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445324
