• DocumentCode
    445331
  • Title

    Modeling of low-frequency noise in single- and double-gate MOSFETs using quantum mechanical approach

  • Author

    Rai, Shailesh S. ; Islam, Syed S.

  • Author_Institution
    Dept. of Electr. Eng., Rochester Inst. of Technol., NY
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    This paper reports a model to calculate low frequency noise in single- and double-gate MOSFETs using a quantum mechanical approach. The cross-sections of the single- and double-gate FETs are shown in the paper
  • Keywords
    MOSFET; semiconductor device models; semiconductor device noise; double-gate MOSFET; low-frequency noise; quantum mechanical approach; single-gate MOSFET; 1f noise; Doping; Frequency; Low-frequency noise; MOS devices; MOSFETs; Quantum mechanics; Semiconductor device noise; Silicon; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553063
  • Filename
    1553063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445331