• DocumentCode
    445334
  • Title

    Interface and gate line edge roughness effects on intra die variance in mos device characteristics

  • Author

    Gunther, Norman ; Hamadeh, E. ; Niemann, Darrell ; Rahman, Mahmud

  • Volume
    1
  • fYear
    2005
  • fDate
    June 20-22, 2005
  • Firstpage
    83
  • Lastpage
    84
  • Keywords
    Capacitance; Circuits; Electron devices; Fabrication; Fluctuations; MOS devices; Open systems; Predictive models; Strontium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553066
  • Filename
    1553066
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445334