DocumentCode

445337

Title

High mobility Ge pMOS fabricated using a novel heteroepitaxial ge on Si growth method

Author

Nayfeh, Ammar ; On Chui, Chi ; Yonehara, Takao ; Saraswa, K.C.

Volume

1

fYear

2005

fDate

June 20-22, 2005

Firstpage

89

Lastpage

90

Keywords

Annealing; Atomic layer deposition; Dielectric substrates; Etching; Hydrogen; Lattices; MOSFETs; Rough surfaces; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553069

Filename

1553069