Title :
Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs
Author :
Yokoyama, T. ; Nishimura, T. ; Kita, K. ; Kyuno, K. ; Toriumi, A.
Author_Institution :
Dept. of Mater. Sci., Tokyo Univ.
Abstract :
This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance
Keywords :
carbon compounds; field effect transistors; organic semiconductors; C22F14; N-channel organic FET; OFET performance; P-channel organic FET; PF-pentacene; pentacene; perfluoropentace; Conducting materials; Crystalline materials; Electrodes; Energy states; FETs; Gold; Inorganic materials; OFETs; Pentacene; Semiconductor diodes;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553078
