• DocumentCode
    445345
  • Title

    Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

  • Author

    Yokoyama, T. ; Nishimura, T. ; Kita, K. ; Kyuno, K. ; Toriumi, A.

  • Author_Institution
    Dept. of Mater. Sci., Tokyo Univ.
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a better OFET performance
  • Keywords
    carbon compounds; field effect transistors; organic semiconductors; C22F14; N-channel organic FET; OFET performance; P-channel organic FET; PF-pentacene; pentacene; perfluoropentace; Conducting materials; Crystalline materials; Electrodes; Energy states; FETs; Gold; Inorganic materials; OFETs; Pentacene; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553078
  • Filename
    1553078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445345